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2SC2712S-YLF Bipolar Transistors Integrated Circuit IC Chip BJT SM Sig NPN Trans VCEO 50V 150mA

Product Summary

2SC2712S-Y,LF / Bipolar Transistors - BJT SM Sig NPN Trans VCEO -50V IC -150mA Key Specifications Category: Bipolar Transistors - BJT Technology: Si Polarity: NPN Max Collector Current: 150 mA Collector-Emitter Voltage: 50 V Operating Temperature: -55°C to +125°C Detailed Specifications Parameter ...

Basic Properties
Brand Name
New & Original
PRODUCT MODEL
2SC2712S-Y,LF
Trading Properties
MOQ
50
payment method
T/T,Western Union,L/C
Product Custom Attributes
Highlight

2SC2712S-YLF Integrated Circuit IC Chip

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2SC2712S-YLF Bipolar Transistors

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50V Integrated Circuit IC Chip

Product Description
Detailed Specifications & Features
2SC2712S-Y,LF / Bipolar Transistors - BJT SM Sig NPN Trans VCEO -50V IC -150mA
Key Specifications
Category: Bipolar Transistors - BJT
Technology: Si
Polarity: NPN
Max Collector Current: 150 mA
Collector-Emitter Voltage: 50 V
Operating Temperature: -55°C to +125°C
Detailed Specifications
Parameter Value
Mounting Style SMD/SMT
Package/Case SC-59-3
Configuration Single
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector-Emitter Saturation Voltage 250 mV
Power Dissipation (Pd) 150 mW
Gain Bandwidth Product (fT) 80 MHz
DC Collector/Base Gain (hfe Min) 70
DC Current Gain (hFE Max) 700
Physical Dimensions
Dimension Value
Height 1.1 mm
Length 2.9 mm
Width 1.5 mm
Unit Weight 0.000282 oz
Additional Information
Brand: Toshiba
Series: 2SC2712
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Factory Pack Quantity: 3000
Packaging Options: Reel Cut Tape MouseReel
RoHS Status: Details available
Shipping Restrictions: Not currently available in your region
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