SSF Flash Memory IC Integrated 2 Mbit / 4 Mbit X8 SST29SF040-55-4C-WH ROHS

SST29SF040-55-4C-WH - SILICON STORAGE TECHNOLOGY, INC - 2 MBIT / 4 MBIT (X8) SMALL-SECTOR FLASH

Quick Detail:

2 Mbit / 4 Mbit (x8) Small-Sector Flash

Description:

The SST29SF020/040 and SST29VF020/040 are 256K x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

The SST29SF020/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The SST29VF020/040 devices write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x8 memories.

Featuring high performance Byte-Program, the SST29SF020/040 and SST29VF020/040 devices provide a maximum Byte-Program time of 20 µsec. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of at least 10,000 cycles. Data retention is rated at greater than 100 years.

The SST29SF020/040 and SST29VF020/040 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. They also improve flexibility while lowering the cost for program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Program times independent of the number of Erase/Program cycles that have occurred. Therefore, the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.

To meet high density, surface mount requirements, the SST29SF020/040 and SST29VF020/040 devices are offered in 32-lead PLCC and 32-lead TSOP packages.

Applications:

• Organized as 256K x8 / 512K x8

• Single Voltage Read and Write Operations

– 4.5-5.5V for SST29SF020/040

– 2.7-3.6V for SST29VF020/040

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 10 mA (typical)

– Standby Current:

30 µA (typical) for SST29SF020/040

1 µA (typical) for SST29VF020/040

• Sector-Erase Capability

– Uniform 128 Byte sectors

• Fast Read Access Time:

– 55 ns for SST29SF020/040

– 70 ns for SST29VF020/040

• Latched Address and Data

• Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

4 seconds (typical) for SST29SF/VF020

8 seconds (typical) for SST29SF/VF040

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility for SST29SF020/040

• CMOS I/O Compatibility for SST29VF020/040

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

• All non-Pb (lead-free) devices are RoHS compliant

Specifications: