IRF3710PBF ELECTRONIC COMPONENT BRAND NEW AND ORIGINAL INTEGRATED CIRCUITS CHIP IC
| Product Category: | MOSFET | |
| RoHS: | Details | |
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package / Case: | TO-220-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Id - Continuous Drain Current: | 57 A | |
| Rds On - Drain-Source Resistance: | 23 mOhms | |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 4 V | |
| Qg - Gate Charge: | 86.7 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 175 C | |
| Pd - Power Dissipation: | 200 W | |
| Channel Mode: | Enhancement | |
| Packaging: | ||
| Brand: | ||
| Configuration: | Single | |
| Height: | 15.65 mm | |
| Length: | 10 mm | |
| Product Type: | MOSFET | |
| 1000 | ||
| Subcategory: | MOSFETs | |
| Transistor Type: | 1 N-Channel | |
| Width: | 4.4 mm | |
| Part # Aliases: | IRF3710PBF SP001551058 | |
| Unit Weight: | 0.068784 oz |
