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600v 16a Mosfet Power Transistor TO-247-3 IRFPC60PBF Through Hole

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600v 16a Mosfet Power Transistor TO-247-3 IRFPC60PBF Through Hole
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Features
Specifications
Manufacturer Part Number: IRFPC60PBF
Brand Name: Original
Type: Integrated Circuit
Place Of Origin: Original Manufacturer
DC: Lastest New
Lead Time: 1-3Working Days
High Light:

600v Mosfet Power Transistor

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16a Mosfet Power Transistor

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IRFPC60PBF

Basic Infomation
Place of Origin: Original Factory
Brand Name: IR
Certification: Standard Certification
Model Number: IRFPC60PBF
Payment & Shipping Terms
Packaging Details: Standard Packaging
Delivery Time: Within 3days
Payment Terms: T/T in advance, Western Union, Xtransfer
Supply Ability: 1000
Product Description

IRFPC60PBF MOSFET POWER TRANSISTOR 600V 16A THROUGH HOLE TO-247-3

 

Goods Condition: Brand New Part Status: Active
Lead Free / Rohs: Complaint Function: MOSFET
Mounting Type: Through Hole Package: TO247
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high power mosfet transistors

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n channel transistor

 

 

IRFPC60PBF MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

Manufacturer Vishay Siliconix  
Series -  
Packaging ? Tube ?  
Part Status Active  
FET Type N-Channel  
Technology MOSFET (Metal Oxide)  
Drain to Source Voltage (Vdss) 600V  
Current - Continuous Drain (Id) @ 25°C 16A (Tc)  
Drive Voltage (Max Rds On, Min Rds On) 10V  
Vgs(th) (Max) @ Id 4V @ 250µA  
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V  
Vgs (Max) ±20V  
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V  
FET Feature -  
Power Dissipation (Max) 280W (Tc)  
Rds On (Max) @ Id, Vgs 400 mOhm @ 9.6A, 10V  
Operating Temperature -55°C ~ 150°C (TJ)  
Mounting Type Through Hole  
Supplier Device Package TO-247-3  
Package / Case TO-247-3

 

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