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43A 200v Mosfet Power Transistor SMPS n channel IRFB38N20DPBF 3.8W 300W

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43A 200v Mosfet Power Transistor SMPS n channel IRFB38N20DPBF 3.8W 300W
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Features
Specifications
Manufacturer Part Number: IRFB38N20DPBF
Type: Integrated Circuit
Place Of Origin: Original Manufacturer
Brand Name: Original Brand
DC: Lastest New
Lead Time: 1-3Working Days
High Light:

200v Mosfet Power Transistor

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Mosfet Power Transistor SMPS

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IRFB38N20DPBF

Basic Infomation
Place of Origin: Original Factory
Brand Name: IOR
Certification: ROHS
Model Number: IRFB38N20DPBF
Payment & Shipping Terms
Packaging Details: Standard Packaging
Delivery Time: Within 3days
Payment Terms: T/T in advance, Western Union, Xtransfer
Supply Ability: 1000
Product Description

200V 43A 3.8W 300W MOSFET POWER TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET

 

FET Type: N-Channel Drain To Source Voltage: 200V
Current - Continuous Drain: 43A Drive Voltage: 10V
High Light:

high power mosfet transistors

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n channel mosfet transistor

 

 

IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET

Applications
l High frequency DC-DC converters
l TO-220 is available in PbF as Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)
l Fully Characterized Avalanche Voltage and Current

 

FET Type N-Channel  
Technology MOSFET (Metal Oxide)  
Drain to Source Voltage (Vdss) 200V  
Current - Continuous Drain (Id) @ 25°C 43A (Tc)  
Drive Voltage (Max Rds On, Min Rds On) 10V  
Rds On (Max) @ Id, Vgs 54 mOhm @ 26A, 10V  
Vgs(th) (Max) @ Id 5V @ 250µA  
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V  
Vgs (Max) ±20V  
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V  
FET Feature -  
Power Dissipation (Max) 3.8W (Ta), 300W (Tc)  
Operating Temperature -55°C ~ 175°C

 

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